UTF3055

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-318.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Source Voltage

60

V

60

V

Continuous

±20

V

Gate Source Voltage

±30

V

3.0

A

9.0

A

Single Pulsed Avalanche Energy (Note 2)

74

mJ

SOT-223

0.83

TO-252

1.136

W

SOT-223

14

Derate above 25°C

TO-252

20

mW/°C

Junction Temperature

175

°C

Strong Temperature

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

150

Junction to Ambient (Note)

TO-252

110

°C/W

Note: When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).