UTF3055G-AA3-R datasheet(3/5 Pages) UTC

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UTF3055

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-318.D

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain Source Breakdown Voltage (Note 1)

VGS= 0V, ID =250µA

Temperature Coefficient (Positive)

BVDSS

mV/°C

Drain-Source Leakage Current

IDSS

VGS=0V, VDS=60V

1.0

µA

Gate-Source Leakage Current

IGSS

VGS = ±20 V, VDS =0V

±100

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS=VDS, ID =250µA

2.0

3.0

4.0

Temperature Coefficient (Negative)

VGS(TH)

6.6

mV/°C

Static Drain-Source On-State Resistance

RDS(ON) VGS =10 V, ID =1.5A

110

mΩ

Static Drain-to-Source On-Resistance

VDS(ON) VGS =10 V, ID =3A

0.27

0.40

Forward Tran conductance

gFS

VDS=8.0V, ID=1.7A

3.2

DYNAMIC PARAMETERS

Input Capacitance

CISS

324

455

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS =0 V, VDS =25 V, f=1.0MHz

110

155

SWITCHING PARAMETERS

(Note 2)

Turn-ON Delay Time

tD(ON)

9.4

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

VGS=10V, VDD=30V, ID =3.0A ,

RG =9.1Ω (Note 1)

Total Gate Charge

10.6

Gate-Source Charge

QGS

1.9

Gate-Drain Charge

QGD

VGS =10V, VDS =48V, ID =3.0A

(Note 1)

4.2

Diode Forward Voltage

VSD

VGS=0V, IS=3.0A

0.89

1.0

tRR

Body Diode Reverse Recovery Time

8.6

Body Diode Reverse Recovery Charge

QRR

VGS=0V, IS=3.0A,

dI/dt=100 A/μs (Note 1)

0.04

Note:

1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.

2. Switching characteristics are independent of operating junction temperatures.

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