数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

UTT12P10L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT12P10L-TN3-R
功能描述  100V, 12A P-CHANNEL POWER MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT12P10L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT12P10L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTT12P10L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTT12P10L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UTT12P10L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UTT12P10L-TN3-R Datasheet HTML 5Page - Unisonic Technologies UTT12P10L-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
UTT12P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous,
VGSS@-10V
TC=25°C
ID
-19
A
TC=100°C
-13
A
Pulsed (Note 2)
IDM
-72
A
Avalanche Current (Note 2)
IAR
-19
A
Avalanche Energy
Repetitive (Note 3)
EAS
640
mJ
Single Pulsed (Note 2)
EAR
15
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.5
V/ns
Power Dissipation (TC=25°C)
PD
125
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
4. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V,
-100
µA
VDS=-80V, VGS=0V, TJ=150°C
-500
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V
+100 nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-12A (Note 2)
0.20
Forward Transconductance
gFS
VDS=-50V, ID=-11A (Note 2)
6.2
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
1400
pF
Output Capacitance
COSS
590
pF
Reverse Transfer Capacitance
CRSS
140
pF



Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com