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UTT12P10L-TN3-R 数据表(PDF) 5 Page - Unisonic Technologies |
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UTT12P10L-TN3-R 数据表(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() UTT12P10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R502-722.a TEST CIRCUITS AND WAVEFORMS(Cont.) Driver Gate Drive (Note 1) (Note 2) (Note 3) D.U.T. ISD Waveform For N and P Channel Power MOSFET *** VGS=5V for Logic Level and 3V Drive Devices Ripple≤5 % Inductor Curent Body Diode Forward Drop Diode Recovery dv/dt Body Diode Forward Current di/dt D.U.T. VDS Waveform ISD Re-Applied Voltage Reverse Recovery Current VDD VGS=10V * D= P.W. Period Period P.W. Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2) 3. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C |
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