UTT30N06G-TN3-R datasheet(3/8 Pages) UTC

3 / 8 page

UTT30N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-637.A

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

Drain-Source Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

μA

Forward

VGS = 20V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -20V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ

ID=250μA,Referenced to 25℃

0.06

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 15 A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

800

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

VGS = 0 V, VDS = 25 V,

f = 1MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD = 30V, ID =15 A, VGS=10V

(Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

VDS = 60V, VGS = 10 V,

ID = 24A (Note 1, 2)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 30A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

120

Reverse Recovery Time

tRR

Reverse Recovery Charge

QRR

VGS = 0 V, IS = 30A,

dIF / dt = 100 A/μs (Note 1)

μC

Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

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