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UTT30N06G-TN3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UTT30N06G-TN3-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 8 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-637.A 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power supplies, high efficient DC to DC converters and battery operated products. FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UTT30N06L-TN3-R UTT30N06G-TN3-R TO-252 G D S Tape Reel UTT30N06L-TA3-T UTT30N06G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
类似零件编号 - UTT30N06G-TN3-R |
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类似说明 - UTT30N06G-TN3-R |
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