Z01 datasheet(2/12 Pages) STMICROELECTRONICS

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Characteristics

Z01

2/12

Doc ID 7474 Rev 10

Characteristics

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current

(full sine wave)

SOT-223

Ttab = 90 °C

TO-92

TL = 50 °C

SMBflat-3L

Ttab = 107 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

F = 60 Hz

t = 16.7 ms

8.5

I²tI²t Value for fusing

tp = 10 ms

0.35

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 2.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Z01

Unit

IGT

(1)

Minimum IGT is guaranteed at 5% of IGT max.

VD = 12 V,

RL = 30 Ω

I - II - III

MAX.

VGT

ALL

MAX.

1.3

VGD

VD = VDRM,

RL = 3.3 kΩ,

Tj = 125 °C

ALL

MIN.

0.2

IH (2)

IT = 50 mA

MAX.

IG = 1.2 IGT

I - III - IV

MAX.

710

dV/dt (2)

VD = 67% VDRM gate open

Tj = 110 °C

MIN.

100

V/µs

(dV/dt)c

(2)

For both polarities of A2 referenced to A1.

(dI/dt)c = 0.44 A/ms,

Tj = 110 °C

MIN.

0.5

V/µs

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