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Z01 数据表(PDF) 4 Page - STMicroelectronics

部件名 Z01
功能描述  Standard 1A Triacs
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

Z01 数据表(HTML) 4 Page - STMicroelectronics

  Z01 Datasheet HTML 1Page - STMicroelectronics Z01 Datasheet HTML 2Page - STMicroelectronics Z01 Datasheet HTML 3Page - STMicroelectronics Z01 Datasheet HTML 4Page - STMicroelectronics Z01 Datasheet HTML 5Page - STMicroelectronics Z01 Datasheet HTML 6Page - STMicroelectronics Z01 Datasheet HTML 7Page - STMicroelectronics Z01 Datasheet HTML 8Page - STMicroelectronics Z01 Datasheet HTML 9Page - STMicroelectronics Next Button
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Characteristics
Z01
4/12
Doc ID 7474 Rev 10
Figure 3.
On-state rms current versus
ambient temperature (free air
convection full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(Zth(j-a))
I
(A)
T(RMS)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
R
= 60°C/W
(SOT-223)
th(j-a)
R
= 150°C/W
(TO-92)
th(j-a)
T
(°C)
amb
R
th (j-a) = 100°C/W
(SMBflat-3L)
0.01
0.10
1.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z01xxMUF
Copper surface area
= 5cm²
Z01xxA
Z01xxN
K=[Z
/R
th(j-a)
th(j-a)]
t (s)
p
Figure 5.
Relative variation of holding
current and latching current versus
junction temperature (typ. values)
Figure 6.
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
I, I [T ] /
HL
j
I , I [T =25°C]
HL
j
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
I
H
I
L
T (°C)
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
Tj(°C)
I
GT,VGT[Tj]/ IGT,VGT[Tj=25 °C]
I
GT Q1-Q2
V
GT Q1-Q2-Q3-Q4
I
GT Q3
I
GT Q4
Figure 7.
Surge peak on-state current versus
number of cycles
Figure 8.
Non-repetitive surge peak
on-state current and corresponding
value of I2t sinusoidal pulse width
0
1
2
3
4
5
6
7
8
9
1
10
100
1000
Number of cycles
Repetitive
T
= 95 °C
amb
Non repetitive
T initial = 25 °C
j
I
(A)
TSM
One cycle
T = 20 ms
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
t (ms)
p
I
(A), I t (A s)
TSM
22
It
2
dI/dt limitation:
20A/µs
T initial = 25°C
j
ITSM



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