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SFH416-R 数据表(PDF) 5 Page - Siemens Semiconductor Group |
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SFH416-R 数据表(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 5 page ![]() SFH 415 SFH 416 Semiconductor Group 5 1997-11-01 Relative spectral emission Irel = f (λ) Forward current IF = f (VF), single pulse, tp = 20 µs OHRD1938 λ rel Ι 0 880 920 960 1000 nm 1060 20 40 60 80 % 100 OHR01554 V F -3 10 10 -2 10 -1 10 0 10 1 F Ι A 1 2 3 4 V 5 Radiant intensity Single pulse, tp = 20 µs Ie Ie 100 mA = f (IF) OHR01551 10 -3 Ι F -2 10 10 -1 10 0 10 1 10 2 Ι e 100 mA e Ι -2 10 -1 10 0 10 1 10 A A Max. permissible forward current IF = f (TA) OHR00883 0 F Ι 0 20 40 60 80 100 120 20 40 60 80 100 120 mA ˚C T A = 450 K/W thjA R Radiation characteristics SFH 416 Irel = f (ϕ) OHR01553 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0.4 0.6 0.8 1.0 100˚ 90˚ 80˚ 70˚ 60˚ 50˚ 0˚ 10˚ 20˚ 30˚ 40˚ 0 0.2 0.4 0.6 0.8 1.0 ϕ Radiation characteristics SFH 415 Irel = f (ϕ) OHR01552 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ϕ 0.2 0.4 0.6 0.8 1.0 100 0 0 Permissible pulse handling capability IF = f (τ), TC = 25 °C, duty cycle D = parameter t OHR00860 p -5 10 10 2 Ι F 10 3 10 4 5 DC 0.2 0.5 0.1 0.005 0.01 0.02 0.05 t p T Ι F t p T D = 5 mA -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 s D = |
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