2DB1182Q

Document number: DS35651 Rev. 1 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated

2DB1182Q

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-32

V

Emitter-Base Voltage

-5

V

Continuous Collector Current

-2

A

Peak Pulse Collector Current

-3

A

Characteristic

Symbol

Value

Unit

Power Dissipation

10

W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

-40

⎯

⎯

V

Collector-Emitter Breakdown Voltage

-32

⎯

⎯

V

Emitter-Base Breakdown Voltage

-5

⎯

⎯

V

Collector Cutoff Current

⎯

⎯

-1

μA

Emitter Cutoff Current

⎯

⎯

-1

μA

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

⎯

⎯

-0.8

V

DC Current Gain

120

⎯

270

⎯

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

⎯

110

⎯

MHz

f = 30MHz

Output Capacitance

⎯

26

⎯

pF

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤ 2%.

0

200

400

600

800

1,000

0.1

1

10

Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage

-V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

I = -1mA

B

I = -2mA

B

I = -3mA

B

I = -4mA

B

I = -5mA

B

0

50

100

150

200

250

300

350

400

0.001

0.01

0.1

1

10

Fig. 2 Typical DC Current Gain vs. Collector Current

-I , COLLECTOR CURRENT (A)

C

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

V

= -3V

CE