2DB1182Q

Document number: DS35651 Rev. 1 - 2

3 of 5

www.diodes.com

November 2011

© Diodes Incorporated

2DB1182Q

0

0.1

0.2

0.3

0.4

0.001

0.01

0.1

1

10

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

-I , COLLECTOR CURRENT (A)

C

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

I/I = 10

CB

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

Fig. 4 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

C

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -3V

CE

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

Fig. 5 Typical Base-Emitter Saturation Voltage

vs. Collector Current

-I , COLLECTOR CURRENT (A)

C

T = -55°C

A

T = 25°C

A

T = 150°C

A

T = 125°C

A

T = 85°C

A

I/I = 10

CB

10

100

1,000

0.1

1

10

100

Fig. 6 Typical Capacitance Characteristics

V , REVERSE VOLTAGE (V)

R

f = 1MHz

0

20

40

60

80

100

120

140

0

10

2030

40

50

6070

8090 100

I , COLLECTOR CURRENT (mA)

C

Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current

V

= -5V

CE

f = 30MHz