4

RF Device Data

Freescale Semiconductor, Inc.

AFT09MS031NR1 AFT09MS031GNR1

TYPICAL CHARACTERISTICS

20

1

100

010

5

Figure 2. Capacitance versus Drain--Source Voltage

15

10

0

5

4

2

Figure 3. Drain Current versus Drain--Source Voltage

6

2

Note: Measured with both sides of the transistor tied together.

4

3

1

10

812

16

14

18

20

2.5 Vdc

0

300

6

7

8

9

3.0 Vdc

3.25 Vdc

3.5 Vdc

250

90

Figure 4. MTTF versus Junction Temperature -- CW

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

110

130

150

170

190

210

230

3.2 Amps

3.9 Amps

Measured with ±30 mV(rms)ac @ 1 MHz