AFT09MS031N datasheet(1/21 Pages) FREESCALE

部件名	AFT09MS031N

功能描述	RF Power LDMOS Transistors

PDF	21 Pages

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制造商	FREESCALE [Freescale Semiconductor, Inc]

网页	http://www.freescale.com

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AFT09MS031NR1 AFT09MS031GNR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from

764 to 941 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA =25°C, CW)

Frequency

(MHz)

Gps

(dB)

ηD

(%)

P1dB

(W)

764

18.0

74.1

32

870

17.2

71.0

31

941

15.7

68.1

31

800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA =25°C, CW)

Frequency

(MHz)

Gps

(dB)

ηD

(%)

P1dB

(W)

760

15.7

62.0

44

820

15.7

63.0

37

870

15.5

61.0

36

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

Pout

(W)

Test

Voltage

Result

870

CW

>65:1 at all

Phase Angles

54

(3 dB Overdrive)

17

No Device

Degradation

Features

• Characterized for Operation from 764 to 941 MHz

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Integrated ESD Protection

• Integrated Stability Enhancements

• Wideband — Full Power Across the Band (764–870 MHz)

• 225°C Capable Plastic Package

• Exceptional Thermal Performance

• High Linearity for: TETRA, SSB, LTE

• Cost--effective Over--molded Plastic Packaging

• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Typical Applications

• Output Stage 800 MHz Trunking Band Mobile Radio

• Output Stage 900 MHz Trunking Band Mobile Radio

Document Number: AFT09MS031N

Rev. 0, 5/2012

Freescale Semiconductor

Technical Data

764--941 MHz, 31 W, 13.6 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

AFT09MS031NR1

AFT09MS031GNR1

TO--270--2

PLASTIC

AFT09MS031NR1

Figure 1. Pin Connections

(Top View)

Drain

Gate

Note: The backside of the package is the

source terminal for the transistor.

TO--270--2 GULL

PLASTIC

AFT09MS031GNR1

类似零件编号 - AFT09MS031N

制造商	部件名	数据表	功能描述
NXP Semiconductors	AFT09MS007N	1Mb / 28P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 4/2014
	AFT09MS007NT1	1Mb / 28P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 4/2014
	AFT09MS015N	861Kb / 18P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 7/2014
	AFT09MS015NT1	861Kb / 18P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 7/2014

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