SIR804DP datasheet(1/13 Pages) VISHAY

部件名	SIR804DP

功能描述	N-Channel 100 V (D-S) MOSFET

PDF	13 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

SiR804DP

New Product

Document Number: 65703

S10-2680-Rev. B, 22-Nov-10

www.vishay.com

1

N-Channel 100 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Fixed Telecom

•

DC/DC Converter

•

Primary Side Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

100

0.0072 at VGS = 10 V

60

24.8 nC

0.0078 at VGS = 7.5 V

60

0.0103 at VGS = 4.5 V

60

Ordering Information: SiR804DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 54 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

60a

A

TC = 70 °C

60a

TA = 25 °C

20.8b, c

TA = 70 °C

16.6b, c

Pulsed Drain Current

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a

TA = 25 °C

5.6b, c

Single Pulse Avalanche Current

L =

0.1 mH

IAS

35

Single Pulse Avalanche Energy

EAS

61

mJ

Maximum Power Dissipation

TC = 25 °C

PD

104

W

TC = 70 °C

66.6

TA = 25 °C

6.25b, c

TA = 70 °C

4.0b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

15

20

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

0.9

1.2

类似零件编号 - SIR804DP

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Vishay Siliconix	SIR804DP	371Kb / 13P	N-Channel 100 V (D-S) MOSFET 22-Nov-10

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