SIR804DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 65703

S10-2680-Rev. B, 22-Nov-10

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Vishay Siliconix

SiR804DP

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

100

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

VGS = 3 V

VGS = 4 V

0.0050

0.0065

0.0080

0.0095

0.0110

0.0125

204060

100

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

VGS = 7.5 V

0.0

10.6

21.2

31.8

42.4

53.0

ID = 20 A

Qg - Total Gate Charge (nC)

VDS = 75 V

VDS = 25 V

VDS = 50 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1234

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

900

1800

2700

3600

4500

204060

100

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID =20A

VGS = 10 V

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