Characteristics

STPS30M60S

2/9

Doc ID 022049 Rev 1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values with terminals 1 and 3 short circuited at

25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

90

A

Average forward current,

δ = 0.5

30

A

Surge non repetitive forward current

600

A

(1)

1.

For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

34400

W

(2)

2.

See Figure 12

Maximum repetitive peak

avalanche voltage

80

V

VASM

(2)

Maximum single-pulse

peak avalanche voltage

80

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

0.9

°C/W

Table 4.

Static electrical characteristics (terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage

current

-

35

165

µA

-

25

100

mA

(2)

2.

Forward voltage drop

-

0.475

0.515

V

-

0.380

0.425

-

0.540

0.590

-

0.470

0.535

dPtot

dTj

<

1

Rth(j-a)