STPS30M60ST datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS30M60S

4/9

Doc ID 022049 Rev 1

Figure 12.

Reverse safe operating area (tp < 1 µs and Tj < 150 °C)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

2030

4050

I (mA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

10000

100

C(pF)

V (V)

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

Figure 10.

Forward voltage drop versus

forward current

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab

0.1

1.0

10.0

100.0

1000.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(A)

(Maximum values)

T = 25 °C

(Maximum values)

T = 125 °C

(Typical values)

T = 125 °C

(V)

DPAK

(°C/W)

th(j-a)

S (cm )

epoxy printed board copper thickness = 35 µm

40.0

50.0

60.0

70.0

80.0

90.0

100.0

110.0

120.0

130.0

140.0

100

105

110

115

120

(A)

arm

) 150 °C, 1µs

arm

(V)

arm

STPS30M60ST 数据表(PDF) 4 Page - STMicroelectronics

STPS30M60ST 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

STPS30M60ST 数据表(PDF) 4 Page - STMicroelectronics

STPS30M60ST 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载