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SST39LF080 数据表(PDF) 12 Page - Silicon Storage Technology, Inc

部件名 SST39LF080
功能描述  8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
PDF  26 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SST [Silicon Storage Technology, Inc]
网页  http://www.sst.com/
标志 SST - Silicon Storage Technology, Inc

SST39LF080 数据表(HTML) 12 Page - Silicon Storage Technology, Inc

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Data Sheet
8 Mbit / 16 Mbit Multi-Purpose Flash
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
©2001 Silicon Storage Technology, Inc.
S71146-03-000
6/01
396
AC CHARACTERISTICS
TABLE 13: READ CYCLE TIMING PARAMETERS
VDD = 3.0-3.6V FOR SST39LF080/016 AND 2.7-3.6V FOR SST39VF080/016
Symbol Parameter
SST39LF080/016-55
SST39VF080/016-70
SST39VF080/016-90
Units
Min
Max
Min
Max
Min
Max
TRC
Read Cycle Time
55
70
90
ns
TCE
Chip Enable Access Time
55
70
90
ns
TAA
Address Access Time
55
70
90
ns
TOE
Output Enable Access Time
30
35
45
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
0
ns
TCHZ1
CE# High to High-Z Output
15
20
30
ns
TOHZ1
OE# High to High-Z Output
15
20
30
ns
TOH1
Output Hold from Address Change
0
0
0
ns
T13.3 396
TABLE 14: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TBE
Block-Erase
25
ms
TSCE
Chip-Erase
100
ms
T14.0 396



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