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1N6642U 数据表(PDF) 2 Page - STMicroelectronics

部件名 1N6642U
功能描述  Aerospace 0.3 A - 100 V switching diode
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

1N6642U 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
1N6642U
2/7
Doc ID 16972 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.74 x IF(AV) + 1.00 x IF
2
(RMS )
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
0.5
A
IF(AV)
Average forward rectified current (1)
300
mA
IFSM
Forward surge current
tp = 8.3 ms sinusoidal,
tamb ≤ 25 °C
2A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-65 to +175
°C
Tsol
Maximum soldering temperature (2)
245
°C
1.
For all variants at Tc ≥ +155 °C per diode, derate linearly to 0 A at +175 °C.
2.
Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (1)
60
°C/W
Rth (j-a)
Junction to ambient
280
1.
Package mounted on infinite heatsink
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
VBR
(1)
Breakdown voltage
Tj = 25 °C
IR = 100 µA
100
-
-
V
IR
(1)
Reverse current
Tj = 25 °C
VR = 20 V
-
-
25
nA
Tj = 25 °C
VR = 75 V
-
-
50
nA
Tj = 150 °C
VR = 20 V
-
-
30
µA
Tj = 150 °C
VR = 75 V
-
-
40
µA
VF
(2)
Forward voltage
Tj = 25 °C
IF = 10 mA
-
-
800
mV
Tj = 25 °C
IF = 100 mA
-
-
1200
Tj = 150 °C
IF = 10 mA
-
-
800
Tj = -55 °C
IF = 100 mA
-
-
1200
1.
Pulse test: tp = 10 ms,
δ < 2%
2.
Pulse test: tp = 680 µs,
δ < 2%



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