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1N6642U 数据表(PDF) 3 Page - STMicroelectronics |
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1N6642U 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 1N6642U Characteristics Doc ID 16972 Rev 2 3/7 Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = IR = 10 mA (1) -- 9 ns IF = 1 A, Vr = 30 V, dI/dt = -15 A/µs 20 VFP Forward recovery voltage IFM = 200 mA - - 5 V tFR Forward recovery time IFM = 200 mA - - 20 ns Cj Diode capacitance VR = 0 V, V = 50 mV, F = 1 MHz - - 5 pF VR = 1.5 V, V = 50 mV, F = 1 MHz - - 2.8 pF 1. Guaranteed but not tested Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Forward voltage drop versus forward current (maximum values) I (A) FM 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T j=-55 °C T j=150 °C T j=150 °C T j=25 °C T j=25 °C V (V) FM I (A) FM 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T j=-55 °C T j=150 °C T j=150 °C T j=25 °C T j=25 °C V (V) FM |
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