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BYV52HR 数据表(PDF) 2 Page - STMicroelectronics |
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BYV52HR 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics BYV52HR 2/8 Doc ID 17395 Rev 1 1 Characteristics Table 2. Absolute maximum ratings Symbol Characteristic Value Unit I FSM Forward surge current (per diode)(1) 1. Sinusoidal pulse of 10 ms duration 400 A VRRM Repetitive peak reverse voltage(2) 2. Pulsed, duration 5 ms, F = 50 Hz 200 V IO Average output rectified current (50% duty cycle):(3) 3. For Tcase ≥ +120°C, derate linearly to 0 A at +150°C. 30 A I F(RMS) Forward rms current (per diode) 30 A TOP Operating case temperature range(4) 4. For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100% inert atmosphere. -55 to +150 °C TJ Junction temperature +150 °C T STG Storage temperature range(4) -55 to +150 °C TSOL Soldering temperature(5) 5. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. +260 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth (j-c) Junction to case (1) 1. Package mounted on infinite heatsink. 0.9 °C/W |
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