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BYV52HR 数据表(PDF) 2 Page - STMicroelectronics

部件名 BYV52HR
功能描述  Aerospace 30 A - 200 V fast recovery rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BYV52HR 数据表(HTML) 2 Page - STMicroelectronics

  BYV52HR Datasheet HTML 1Page - STMicroelectronics BYV52HR Datasheet HTML 2Page - STMicroelectronics BYV52HR Datasheet HTML 3Page - STMicroelectronics BYV52HR Datasheet HTML 4Page - STMicroelectronics BYV52HR Datasheet HTML 5Page - STMicroelectronics BYV52HR Datasheet HTML 6Page - STMicroelectronics BYV52HR Datasheet HTML 7Page - STMicroelectronics BYV52HR Datasheet HTML 8Page - STMicroelectronics  
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Characteristics
BYV52HR
2/8
Doc ID 17395 Rev 1
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Characteristic
Value
Unit
I
FSM
Forward surge current (per diode)(1)
1.
Sinusoidal pulse of 10 ms duration
400
A
VRRM
Repetitive peak reverse voltage(2)
2.
Pulsed, duration 5 ms, F = 50 Hz
200
V
IO
Average output rectified current (50% duty cycle):(3)
3.
For Tcase ≥ +120°C, derate linearly to 0 A at +150°C.
30
A
I
F(RMS)
Forward rms current (per diode)
30
A
TOP
Operating case temperature range(4)
4.
For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%
inert atmosphere.
-55 to +150
°C
TJ
Junction temperature
+150
°C
T
STG
Storage temperature range(4)
-55 to +150
°C
TSOL
Soldering temperature(5)
5.
Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
+260
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (1)
1.
Package mounted on infinite heatsink.
0.9
°C/W



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