BYV52HR datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

BYV52HR

Characteristics

Doc ID 17395 Rev 1

3/8

To evaluate the conduction losses use the following equation:

P = 0.74 x IF(AV) + 1.00 x IF

(RMS )

Table 4.

Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C

Symbol

Characteristic

MIL-STD-750

test method

Test conditions

Limits

Units

Min.

Max.

Reverse current

4016

DC method, VR = 200 V

µA

VF1

(1)

Forward voltage

4011

Pulse method, IF = 20 A

1.01

(1)

Pulse method, IF = 30 A

1.15

VBR

Breakdown voltage

4021

IR = 100 µA

200

Capacitance

4001

VR = 10 V, F = 1 MHz

400

trr

Reverse recovery time

4031

IF = 1 A, VR = 30 V,

dIF/dt = -50 A/µs

-55

th(j-c)

(2)

Relative thermal impedance,

junction to case

3101

IH = 15 to 40 A, tH = 50 ms

IM = 50 mA, tmd = 100 µs

Calculate

ΔVF(3) °C/W

Pulse width

≤ 300µs, duty cycle ≤ 2%

Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.

The limits for

ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and

shall guarantee the Rth(j-c) limits specified in maximum ratings.

Table 5.

Electrical measurements at high and low temperatures (per diode)

Symbol

Characteristic

MIL-STD-750

test method

Test conditions(1)

Limits

Units

Min.

Max.

Reverse current

4016

Tcase = +125 (+0, -5) °C

DC method, VR = 200 V

-15

(2)

Forward voltage

4011

Tcase = +125 (+0, -5) °C

pulse method, IF = 20 A

-0.95

Tcase = +55 (+0, -5) °C

pulse method, IF = 20 A

-1.15

Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a

100% inspection may be performed.

Pulse width

≤ 300µs, duty cycle ≤ 2%

BYV52HR 数据表(PDF) 3 Page - STMicroelectronics

BYV52HR 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载