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ISO8200B 数据表(PDF) 9 Page - STMicroelectronics

部件名 ISO8200B
功能描述  Galvanic isolated octal high-side smart power solid state relay
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ISO8200B 数据表(HTML) 9 Page - STMicroelectronics

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ISO8200B
Absolute maximum rating
Doc ID 023802 Rev 1
9/33
3
Absolute maximum rating
Table 2.
Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
VCC
Power supply voltage
-0.3
45
V
Vdd
Digital supply voltage
-0.3
6.5
V
VIN
DC input pins, ld & output enable voltage
-0.3
+6.5
V
VFAULT Fault voltage
-0.3
+6.5
V
IGNDdd DC digital ground reverse current
-25
mA
IOUT
Channel output current (continuous)
Internally
limited
A
IGNDcc
DC power ground reverse current
-250
mA
IR
Reverse output current (per channel)
-5
A
IIN
DC input pins, ld & output enable current
-10
+ 10
mA
IFAULT
Fault current
-10
+ 10
mA
VESD
Electrostatic discharge with human body model
(R = 1.5 K
Ω; C = 100 pF)
2000
V
EAS
Single pulse avalanche energy per channel not
simultaneously
300
mJ
PTOT
Power dissipation at Tc = 25 °C
Internally
limited(1)
1.
Protection functions are intended to avoid IC damage in fault conditions and are not intended for
continuous operation. Continuous or repetitive operation of protection functions may reduce the IC lifetime.
W
TJ
Junction operating temperature
Internally
limited(1)
°C
TSTG
Storage temperature
-55 to 150
°C
VISO
Dielectric isolation voltage
TBD
VRMS



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