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ISO8200B 数据表(PDF) 15 Page - STMicroelectronics |
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ISO8200B 数据表(HTML) 15 Page - STMicroelectronics |
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15 / 33 page ![]() ISO8200B Electrical characteristics Doc ID 023802 Rev 1 15/33 Table 11. IEC 60747-5-2 insulation characteristics Symbol Parameter Test condition Characteristic Unit Installation classification (EN 60664-1, Table 1) (1)(2) 1. These ratings refer to reinforced insulation. If only basic insulation is needed, the installation categories of each mains voltage level can be scaled up one level. 2. For three-phase systems the values in the table refer to the line-to-neutral voltage. For rated mains voltage = 50 V RMS I–IV For rated mains voltage = 100 V RMS I–III Pollution degree (EN 60664-1) 2 VIORM Maximum working insulation voltage 60 VPEAK Vini Input to output test voltage (3) 3. Type and sample tests. A 3563 V DC test with TBD s duration is performed at production level. tini < 5 s 1644 VPEAK Partial discharge < 5 pC Vp tm = 1 s 1315 VPEAK Partial discharge < 5 pC VIOTM Transient overvoltage (3) (highest allowable overvoltage) tini = 60 s 3500 VPEAK RIO Insulation resistance VIO = 500 V at TS >109 Ω Table 12. Device immunity specifications Symbol Parameter Test condition Min. Typ. Max. Unit DVISO/dt Common mode transient immunity DVISO = 600V -25 25 V/ns BIM Magnetic field immunity IEC61000-4-8 TBD mT HFI Radiated immunity According to IEC61000-4-3 10 V/m |
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