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STPS1045HR 数据表(PDF) 2 Page - STMicroelectronics |
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STPS1045HR 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS1045HR 2/8 Doc ID 17640 Rev 1 1 Characteristics Table 2. Absolute maximum ratings Symbol Characteristic Value Unit I FSM Forward surge current (per diode)(1) 1. Sinusoidal pulse of 10 ms duration 200 A VRRM Repetitive peak reverse voltage(2) 2. Pulsed, duration 5 ms, F = 50 Hz 45 V IRRM Repetitive peak reverse current(3) 3. Pulsed, duration 2 µs, F = 1 kHz 1A IO Average output rectified current (50% duty cycle):(4) per diode per device 4. For Tcase > +140 °C, derate linearly to 0 A at +175 °C. 10 20 A IF(RMS) Forward rms current (per diode) 15 A TOP Operating temperature range (case temperature) -65 to +175 °C T J Junction temperature +175 °C TSTG Storage temperature range -65 to +175 °C TSOL Soldering temperature(5) 5. Duration 5 seconds maximum and the same package shall not be resoldered until 3 minutes have elapsed. +245 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Characteristic Value Unit Rth(j-c) (1) 1. Package mounted on infinite heatsink Thermal resistance, junction to case per diode per device(2) 2. The per device ratings apply only when both anode terminals are tied togther. 1.65 0.85 °C/W |
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