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STPS1045HR 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS1045HR
功能描述  Aerospace 2 x 10 A - 45 V Schottky rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS1045HR 数据表(HTML) 3 Page - STMicroelectronics

  STPS1045HR Datasheet HTML 1Page - STMicroelectronics STPS1045HR Datasheet HTML 2Page - STMicroelectronics STPS1045HR Datasheet HTML 3Page - STMicroelectronics STPS1045HR Datasheet HTML 4Page - STMicroelectronics STPS1045HR Datasheet HTML 5Page - STMicroelectronics STPS1045HR Datasheet HTML 6Page - STMicroelectronics STPS1045HR Datasheet HTML 7Page - STMicroelectronics STPS1045HR Datasheet HTML 8Page - STMicroelectronics  
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STPS1045HR
Characteristics
Doc ID 17640 Rev 1
3/8
s
Table 4.
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Symbol
Characteristic
MIL-STD-750
test method
Test conditions
Values
Units
Min.
Max.
IR
Reverse Current
4016
DC method, VR = 45V
-
100
µA
VF1
(1)
Forward Voltage
4011
Pulse method, IF = 3 A
-
620
mV
V
F2
(1)
Pulse method, IF = 20 A
-
750
mV
VF3(1)
Pulse method, IF = 20 A
880
mV
C
Capacitance
4001
VR = 5 V, F = 1 MHz
-
500
pF
Zth(j-c)
(2)
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Calculate
ΔVF(3) °C/W
1.
Pulse width
≤ 300 µs, Duty Cycle ≤ 2%
2.
Performed only during screening tests parameter drift values (initial measurements), go-no-go
3.
The limits for
ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5.
Electrical measurements at high and low temperatures (per diode)
Symbol
Characteristic
MIL-STD-750
test method
Test conditions(1)
Values
Units
Min.
Max.
IR
Reverse Current
4016
Tcase = +125 (+0, -5) °C
DC method, VR = 45 V
-15
mA
VF1
(2)
Forward Voltage
4011
Tcase = +125 (+0, -5) °C
pulse method, IF = 3 A
-570
mV
VF2(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
-700
mV
Tcase = -55 (+0, -5) °C
pulse method, IF = 10 A
-850
mV
VF3(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
-800
mV
1.
Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2.
Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.



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