STRH100N6

Radiation characteristics

Doc ID 18353 Rev 3

7/18

3

Radiation characteristics

The technology of STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to

radiative environments. Every manufacturing lot is tested for total ionizing dose (irradiation

done according to the ESCC 22900 specification, window 1.) using the TO-3 package. Both

pre-irradiation and post-irradiation performance are tested and specified using the same

circuitry and test conditions in order to provide a direct comparison.

Total dose radiation (TID) testing

One bias conditions using the TO-3 package:

The following parameters are measured (see

Table 9, Table 10 and Table 11):

●

before irradiation

●

after irradiation

●

after 24 hrs @ room temperature

●

after 168 hrs @ 100 °C anneal

Table 9.

Symbol

Parameter

Test conditions

Drift values

Zero gate voltage drain current

+10

µA

Gate body leakage current

1.5

-1.5

nA

Drain-to-source breakdown

voltage

-15%

V

Gate threshold voltage

-60%/ + 25%

V

Static drain-source on resistance

±15 %

Ω

Table 10.

Symbol

Parameter

Test conditions

Drift values

Total gate charge

-5% / +50%

nC

Gate-source charge

±35 %

Gate-drain charge

-5% / +110%