November 2011

Doc ID 18353 Rev 3

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STRH100N6

Rad-Hard N-channel, 60 V, 80 A Power MOSFET

Features

Applications

Description

This N-channel Power MOSFET is developed with

STMicroelectronics unique STripFET™ process.

It has specifically been designed to sustain high

TID and provide immunity to heavy ion effects.

Figure 1.

Internal schematic diagram

Note:

Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

60 V

80 A

12 m

Ω

134.4 nC

TO-254AA

1

2

3

Table 1.

Device summary

Part numbers

ESCC part

number

Quality level

Package

Lead

finish

Mass (g) Temp. range

EPPL

STRH100N6HY1

-

Engineering

model

TO-254AA

Gold

10

-55 to 150 °C

-

STRH100N6HYG

TBD

ESCC flight

Target

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