ACE634 datasheet(2/9 Pages) ACE

部件名	ACE634

功能描述	20V Complementary Enhancement Mode Field Effect Transistor

PDF	9 Pages

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制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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ACE634

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Packaging Type

SOT-23-6

Ordering information

ACE634 XX +

Electrical Characteristics (N-Channel)

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Drain-Source On Resistance

RDS(ON)

VGS=4.5V, ID=3.5A

mΩ

VGS=2.5V, ID=2.5A

VGS=1.8V, ID=2A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.6

0.75

Gate Leakage Current

IGSS

VDS=0V, VGS=±12V

100

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

Forward Transconductance

gFS

VDS=5V, ID=3A

Diode Forward Voltage

VSD

ISD=1.7A, VGS=0V

0.74

1.0

Maximum Body-Diode Continuous

Current

1.7

Switching

Total Gate Charge

VDS=10V, VGS=4.5V,

ID=4A

6.3

8.1

Gate-Source Charge

Qgs

1.7

2.2

Gate-Drain Charge

Qgd

1.4

1.8

GM : SOT-23-6

Pb - free

Halogen - free

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