ACE634 datasheet(5/9 Pages) ACE

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ACE634

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics (P-Channel)

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250uA

-20

Drain-Source On Resistance

RDS(ON)

VGS=-4.5V, ID=-2.8A

mΩ

VGS=-2.5V, ID=-2A

115

VGS=-1.8V, ID=-2A

118

200

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.5

-0.6

-1

Gate Leakage Current

IGSS

VDS=0V, VGS=±12V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V, VGS=0V

-1

Forward Transconductance

gFS

VDS=-5V, ID =-2.5V

Diode Forward Voltage

VSD

ISD=-1.6A, VGS=0V

-0.81

-1.0

Maximum Body-Diode

Continuous Current

-1.6

Switching

Total Gate Charge

VDS=-6V, VGS=-4.5V,

ID=-2.8A

6.6

8.6

Gate-Source Charge

Qgs

0.3

0.4

Gate-Drain Charge

Qgd

1.3

1.7

Turn-On Delay Time

td(on)

VDD=-6V, RG=6Ω, RL=6Ω,

VGEN=-4.5V, ID=-1A,

9.7

19.4

Turn-On Rise Time

3.6

7.1

Turn-Off Delay Time

td(off)

33.3

66.6

Turn- Off Rise Time

4.5

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=-6V, f=1MHZ

589

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