ACE3400B datasheet(2/6 Pages) ACE

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ACE3400B

N-Channel Enhancement Mode MOSFET

VER 1.2

Ordering information

ACE3400B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown

voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=24V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

0.7

0.8

Gate leakage current

IGSS

VGS=±12V, VDS=0V

±100

Drain-source on-state

resistance

RDS(ON)

VGS=10V, ID=5.2A

mΩ

VGS=4.5V, ID=5A

VGS=2.5V, ID=4A

Forward transconductance

gFS

VDS=5V, ID=5A

Diode forward voltage

VSD

ISD=1A, VGS=0V

0.71

Turn-on delay time

td(on)

VDS=15V, RL=2.3Ω,

VGS=10V, RGEN=3Ω

Turn-off delay time

td(off)

Input capacitance

Ciss

VGS=0V, VDS=15V,

f=1.0MHz

697

Output capacitance

Coss

259

Reverse transfer capacitance

Crss

308

Note : 1. DUT is mounted on a 1in

2 FR-4 board with 2oz. Copper in a still air environment at 25°

2. Repetitive rating, pulse width limited by junction temperature.

BM : SOT-23-3L

Pb - free

Halogen - free

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