ACE3400B datasheet(1/6 Pages) ACE

部件名	ACE3400B

功能描述	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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ACE3400B

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE3400BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge

low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load

switch or in PWM applications.

Features

 V

DS

30V

 R

DS(ON)

@VGS=10V, IDS=5.2A, Typ 24mΩ

 R

DS(ON)

@VGS=4.5V, IDS=5A, Typ 27mΩ

 Fast switching speed

 Low threshold voltage (0.8V) makes this device ideal for portable equipment

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±12

V

Drain Current

Continuous (Note 1)

ID

5.2

A

Pulsed (Note 2)

IDM

30

Power Dissipation (Note 1)

PD

1

W

Operating and storage junction temperature range TJ,TSTG -55~+150 ℃

Packaging Type

SOT-23-3L

3

1

2

SOT-23-3L

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

类似零件编号 - ACE3400B

制造商	部件名	数据表	功能描述
ACE Technology Co., LTD...	ACE3400BM+H	262Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.2
ACE Technology Co., LTD...	ACE3400BM+H	646Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.4

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