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STA335ML 数据表(PDF) 7 Page - STMicroelectronics

部件名 STA335ML
功能描述  2-channel microless high-efficiency digital audio system Sound Terminal®
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STA335ML 数据表(HTML) 7 Page - STMicroelectronics

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STA335ML
Electrical specifications
Doc ID 17638 Rev 4
7/20
3.4
Electrical specifications - digital section
Table 6.
Electrical specifications for digital section
3.5
Electrical specifications - power section
The specifications given here are with the operating conditions: VCC = 18 V, VDD = 3.3 V,
fsw = 384 kHz, Tamb = 25 °C, RL =8 Ω unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Iil
Input current without bias
device
Vi = 0 V
-10
-
10
µA
Iih
Vi = VDD = 3.6 V
-10
-
10
µA
Vil
Low-level input voltage
-
-
-
0.2 *
VDD
V
Vih
High-level input voltage
-
0.8 *
VDD
--
V
Vol
Low-level output voltage
Iol = 2 mA
-
-
0.4 *
VDD
V
Voh
High-level output voltage
Ioh = 2 mA
0.8 *
VDD
--
V
Ipu
Pull-up/down current
-
25
66
125
µA
Rpu
Equivalent pull-up/down
resistance
--
50
-
k
Ω
Table 7.
Electrical specifications for power section
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
Output power BTL
THD = 1%
-
16
-
W
THD = 10%
-
20
-
RdsON
On resistance of power
P-channel/N-channel
MOSFET (Total bridge)
ld = 1 A
-
180
250
m
Ω
ldss
Power
P-channel/N-channel
leakage current
VCC = 20 V
--10
μA
gP
Power P-channel
RdsON matching
ld = 1.5 A
95
-
-
%
gN
Power N-channel
RdsON matching
ld = 1.5 A
95
-
-
%
ILDT
Low current deadtime
(static)
Resistive load Figure 4
-
8
15
ns
IHDT
High current deadtime
(dynamic)
Load = 1.5 A (Figure 5)
-
15
30
ns
tr
Rise time
Resistive load Figure 4
-
1018ns
tf
Fall time
Resistive load Figure 4
-
1018ns



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