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ST10F280 数据表(PDF) 39 Page - STMicroelectronics |
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ST10F280 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 239 page ![]() ST10F280 Internal Flash memory Doc ID 8673 Rev. 3 39/239 It is possible to temporarily disable the Code Protection using Code Temporary Unprotection instruction. Note: Bits that are already at ’0’ in protection register must be confirmed at ’0’ also in data latched during the 4th cycle of set protection command, otherwise an error may occur. Code Temporary Unprotection (CTU). This instruction must be used to temporary disable Code Protection. This instruction is effective only if executed from Flash memory space. To restore the protection status, without using a reset, it is necessary to use a Code Temporary Protection instruction. System reset will reset also the Code Temporary Unprotected status. The Code Temporary Unprotection command consists of the following write cycle: MOV MEM, Rn ; This instruction MUST be executed from Flash memory space Where MEM is an absolute address inside memory space, Rn is a register loaded with data 0FFFFh. Code Temporary Protection (CTP). This instruction allows to restore Code Protection. This operation is effective only if executed from Flash memory and is necessary to restore the protection status after the use of a Code Temporary Unprotection instruction. The Code Temporary Protection command consists of the following write cycle: MOV MEM, Rn ; This instruction MUST be executed from Flash memory space Where MEM is an absolute address inside memory space, Rn is a register loaded with data 0FFFBh. Note that Code Temporary Unprotection instruction must be used when it is necessary to modify the Flash with protected code (SCP), since the write/erase routines must be executed from a memory external to Flash space. Usually, the write/erase routines, executed in RAM, ends with a return to Flash space where a CTP instruction restore the protection. Table 3. Instructions Instruction Mne Cycle 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle 5th Cycle 6th Cycle 7th Cycle Read/Reset RD 1+ Addr.(1) X(2) Read Memory Array until a new write cycle is initiated Data xxF0h Read/Reset RD 3+ Addr.(1) x1554h x2AA8h xxxxxh Read Memory Array until a new write cycle is initiated Data xxA8h xx54h xxF0h Program Word PW 4 Addr.(1) x1554h x2AA8h x1554h WA(3) Read Data Polling or Toggle Bit until Program completes. Data xxA8h xx54h xxA0h WD(4) Block Erase BE 6 Addr.(1) x1554h x2AA8h x1554h x1554h x2AA8h BA BA’(5) Data xxA8h xx54h xx80h xxA8h xx54h xx30h xx30h Chip Erase CE 6 Addr.(1) x1554h x2AA8h x1554h x1554h x2AA8h x1554h Note (6) Data xxA8h xx54h xx80h xxA8h xx54h xx10h Erase Suspend ES 1 Addr.(1) X(2) Read until Toggle stops, then read or program all data needed from block(s) not being erased then Resume Erase. Data xxB0h |
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