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ST10F280 数据表(PDF) 39 Page - STMicroelectronics

部件名 ST10F280
功能描述  16-bit MCU with MAC unit, 512 Kbyte Flash memory and 18 Kbyte RAM
PDF  239 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST10F280 数据表(HTML) 39 Page - STMicroelectronics

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ST10F280
Internal Flash memory
Doc ID 8673 Rev. 3
39/239
It is possible to temporarily disable the Code Protection using Code Temporary Unprotection
instruction.
Note:
Bits that are already at ’0’ in protection register must be confirmed at ’0’ also in data latched
during the 4th cycle of set protection command, otherwise an error may occur.
Code Temporary Unprotection (CTU). This instruction must be used to temporary disable
Code Protection. This instruction is effective only if executed from Flash memory space. To
restore the protection status, without using a reset, it is necessary to use a Code Temporary
Protection instruction. System reset will reset also the Code Temporary Unprotected status.
The Code Temporary Unprotection command consists of the following write cycle:
MOV MEM, Rn ; This instruction MUST be executed from Flash
memory space
Where MEM is an absolute address inside memory space, Rn is a register loaded with data
0FFFFh.
Code Temporary Protection (CTP). This instruction allows to restore Code Protection.
This operation is effective only if executed from Flash memory and is necessary to restore
the protection status after the use of a Code Temporary Unprotection instruction.
The Code Temporary Protection command consists of the following write cycle:
MOV MEM, Rn ; This instruction MUST be executed from Flash
memory space
Where MEM is an absolute address inside memory space, Rn is a register loaded with data
0FFFBh.
Note that Code Temporary Unprotection instruction must be used when it is necessary to
modify the Flash with protected code (SCP), since the write/erase routines must be
executed from a memory external to Flash space. Usually, the write/erase routines,
executed in RAM, ends with a return to Flash space where a CTP instruction restore the
protection.
Table 3.
Instructions
Instruction
Mne Cycle
1st
Cycle
2nd
Cycle
3rd
Cycle
4th
Cycle
5th
Cycle
6th
Cycle
7th
Cycle
Read/Reset
RD
1+
Addr.(1)
X(2)
Read Memory Array until a new write cycle is initiated
Data
xxF0h
Read/Reset
RD
3+
Addr.(1)
x1554h
x2AA8h
xxxxxh
Read Memory Array until a new write
cycle is initiated
Data
xxA8h
xx54h
xxF0h
Program Word
PW
4
Addr.(1)
x1554h
x2AA8h
x1554h
WA(3)
Read Data Polling or
Toggle Bit until Program
completes.
Data
xxA8h
xx54h
xxA0h
WD(4)
Block Erase
BE
6
Addr.(1)
x1554h
x2AA8h
x1554h
x1554h
x2AA8h
BA
BA’(5)
Data
xxA8h
xx54h
xx80h
xxA8h
xx54h
xx30h
xx30h
Chip Erase
CE
6
Addr.(1)
x1554h
x2AA8h
x1554h
x1554h
x2AA8h x1554h
Note
(6)
Data
xxA8h
xx54h
xx80h
xxA8h
xx54h
xx10h
Erase Suspend
ES
1
Addr.(1)
X(2)
Read until Toggle stops, then read or program all data
needed from block(s) not being erased then Resume Erase.
Data
xxB0h



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