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STPS40SM100C 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS40SM100C
功能描述  Power Schottky rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS40SM100C 数据表(HTML) 3 Page - STMicroelectronics

  STPS40SM100C Datasheet HTML 1Page - STMicroelectronics STPS40SM100C Datasheet HTML 2Page - STMicroelectronics STPS40SM100C Datasheet HTML 3Page - STMicroelectronics STPS40SM100C Datasheet HTML 4Page - STMicroelectronics STPS40SM100C Datasheet HTML 5Page - STMicroelectronics STPS40SM100C Datasheet HTML 6Page - STMicroelectronics STPS40SM100C Datasheet HTML 7Page - STMicroelectronics STPS40SM100C Datasheet HTML 8Page - STMicroelectronics STPS40SM100C Datasheet HTML 9Page - STMicroelectronics  
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STPS40SM100C
Characteristics
Doc ID 15525 Rev 2
3/9
Figure 2.
Average forward power dissipation
versus average forward current
(per diode)
Figure 3.
Average forward current versus
ambient temperature (
δ = 0.5, per
diode)
PF(av)(W)
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10121416
18202224
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ=tp/T
tp
I (av)(A)
F
IF(av)(A)
0
2
4
6
8
10
12
14
16
18
20
22
0
25
50
75
100
125
150
R
th(j-a)=Rth(j-c)
R
th(j-a)=15 °C/W
T
δ=tp/T
tp
T
(°C)
amb
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0.001
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(Tj)
P
(25°C)
ARM
ARM
Figure 6.
Non repetitive surge peak forward
current versus overload duration,
maximum values, per diode
Figure 7.
Relative variation of thermal
impedance junction to case
versus pulse duration
0
50
100
150
200
250
300
350
1.E-03
1.E-02
1.E-01
1.E+00
T
c=25 °C
T
c=75 °C
T
c=125 °C
IM
t
δ =0.5
t(s)
IM(A)
Zth(j-c)/Rth(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
T
δ=tp/T
tp
tp(s)



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