STPS40SM100C datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS40SM100C

4/9

Doc ID 15525 Rev 2

Figure 8.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

IR(mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

203040

5060

708090

100

j=125 °C

j=100 °C

j=75 °C

j=50 °C

j=25 °C

j=150 °C

VR(V)

C(pF)

100

1000

10000

100

F=1 MHz

osc=30 mVRMS

j=25 °C

VR(V)

IFM(A)

0.00

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

j=25 °C

Maximum values

j=125 °C

Maximum values

j=125 °C

Maximum values

j=125 °C

Typical values

j=125 °C

Typical values

(V)

Iarm (A)

100

110

120

130

140

150

Varm (V)

Forbidden area

Operating area

Varm (V)

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