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STPS30170DJF 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS30170DJF
功能描述  Power Schottky rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS30170DJF 数据表(HTML) 2 Page - STMicroelectronics

  STPS30170DJF Datasheet HTML 1Page - STMicroelectronics STPS30170DJF Datasheet HTML 2Page - STMicroelectronics STPS30170DJF Datasheet HTML 3Page - STMicroelectronics STPS30170DJF Datasheet HTML 4Page - STMicroelectronics STPS30170DJF Datasheet HTML 5Page - STMicroelectronics STPS30170DJF Datasheet HTML 6Page - STMicroelectronics STPS30170DJF Datasheet HTML 7Page - STMicroelectronics  
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Characteristics
STPS30170DJF
2/7
Doc ID 16749 Rev 3
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.0046 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
170
V
IF(RMS) Forward rms current
45
A
IF(AV)
Average forward current
Tc = 80 °C, δ = 0.5
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
Tc = 25 °C
200
A
PARM
Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
12500
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Table 4.
Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
15
µA
Tj = 125 °C
-
4
12
mA
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 15 A
--
0.88
V
Tj = 125 °C
-
0.65
0.70
Tj = 25 °C
IF = 30 A
--
0.95
Tj = 125 °C
-
0.71
0.79
dPtot
dTj
<
1
Rth(j-a)



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