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STPS30170DJF 数据表(PDF) 2 Page - STMicroelectronics |
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STPS30170DJF 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STPS30170DJF 2/7 Doc ID 16749 Rev 3 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.0046 IF 2 (RMS) Table 2. Absolute ratings (limiting values, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) Forward rms current 45 A IF(AV) Average forward current Tc = 80 °C, δ = 0.5 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tc = 25 °C 200 A PARM Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 12500 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case 2.5 °C/W Table 4. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM -- 15 µA Tj = 125 °C - 4 12 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2% Forward voltage drop Tj = 25 °C IF = 15 A -- 0.88 V Tj = 125 °C - 0.65 0.70 Tj = 25 °C IF = 30 A -- 0.95 Tj = 125 °C - 0.71 0.79 dPtot dTj < 1 Rth(j-a) |
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