UT23P09 datasheet(2/6 Pages) UTC

2 / 6 page

UT23P09

Preliminary

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-844.a

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-100

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

VGS=-10V, TC=25°C

-23

VGS=-10V, TC=100°C

-16

Pulsed (Note 2)

IDM

-76

Avalanche Current (Note 2)

IAR

-11

Avalanche Energy

Single Pulse (Note 3)

EAS

430

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.0

V/ns

Power Dissipation (TC=25°C)

140

Linear Derating Factor

0.91

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.Repetitive rating; pulse width limited by max. junction temperature.

3.Starting TJ=25°C, L=7.1mH, RG=25Ω, IAS=-11A.

4.ISD≤-11A, di/dt≤-470A/µs, VDD≤BVDSS, TJ≤150°C.

THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

1.1

°C/W

UT23P09 数据表(PDF) 2 Page - Unisonic Technologies

UT23P09 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

数据表下载