UT23P09 datasheet(3/6 Pages) UTC

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UT23P09

Preliminary

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-844.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

-100

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=-1mA

-0.11

V/°C

Drain-Source Leakage Current

IDSS

VDS=-100V, VGS=0V

-25

µA

VDS=-80V, VGS=0V, TJ=150°C

-250

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=20V, VDS=0V

100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-11A (Note 5)

0.117

Ω

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1300

Output Capacitance

COSS

400

Reverse Transfer Capacitance

CRSS

240

SWITCHING PARAMETERS

Total Gate Charge

ID=-11A, VDS=-80V, VGS=-10V,

(Note 5)

Gate-to-Source Charge

QGS

Gate-to-Drain ("Miller") Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=-50V, ID=-11A, RG=5.1Ω

RD=4.2Ω, (Note 5)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body Diode Continuous

Source Current

-23

Maximum Body-Diode Pulsed Current

(Note 2)

ISM

-76

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=-11A, VGS=0V

(Note 5)

-1.6

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=-11A, di/dt=-100A/µs

(Note 5)

150

220

Body Diode Reverse Recovery Charge

QRR

830

1200

Note: 5. Pulse width≤300µs; duty cycle≤2%.

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