| 数据搜索系统,热门电子元器件搜索 |
|
M24M01-R 数据表(PDF) 25 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
M24M01-R 数据表(HTML) 25 Page - STMicroelectronics |
|
25 / 38 page ![]() M24M01-R M24M01-DF DC and AC parameters Doc ID 12943 Rev 10 25/38 Table 10. Cycling performance by groups of four bytes Symbol Parameter Test condition(1) 1. Cycling performance for products identified by process letter K. Max. Unit Ncycle Write cycle endurance(2) 2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification. TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle(3) 3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling. TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Table 11. Memory cell data retention Parameter Test condition Min. Unit Data retention(1) 1. For products identified by process letter K. The data retention behavior is checked in production. The 200- year limit is defined from characterization and qualification results. TA = 55 °C 200 Year |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |