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HT46R016 数据表(PDF) 9 Page - Holtek Semiconductor Inc |
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HT46R016 数据表(HTML) 9 Page - Holtek Semiconductor Inc |
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9 / 91 page  Rev. 1.00 8 ���� 1�� �01� Rev. 1.00 9 ���� 1�� �01� HT46R016/HT46R017 Enhanced A/D 8-Bit OTP MCU Absolute Maximum Ratings Supply Voltage ................................................................................................VSS−0.3V to VSS+6.0V Input Voltage ..................................................................................................VSS−0.3V to VDD+0.3V Storage Temperature...................................................................................................-50°C to 125°C Operating Temperature.................................................................................................-40°C to 85°C IOH Total ..................................................................................................................................-100mA IOL Total ................................................................................................................................... 100mA Total Power Dissipation ........................................................................................................ 500mW Note: These are stress ratings only. Stresses exceeding the range specified under "Absolute Maximum Ratings" may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C.Characteristics Ta=�5°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Vo�tage — fSYS=4MHz �.� — 5.5 V fSYS=8MHz 3.3 — 5.5 V fSYS=1�MHz 4.5 — 5.5 V IDD1 Operating C�rrent (HXT� HIRC) 3V No �oad� fSYS=4MHz� ADC disab�e — 1 � mA 5V — �.5 5 mA IDD� Operating C�rrent (HXT� HIRC) 5V No �oad� f SYS =8MHz� ADC disab�e — 4 8 mA IDD3 Operating C�rrent (HXT� HIRC) 5V No �oad� f SYS =1�MHz� ADC disab�e — � 1� mA ISTB1 Standb� C�rrent (LIRC on) 3V No �oad� s�stem HALT — — 5 μA 5V — — 10 μA ISTB� Standb� C�rrent (LIRC off) 3V No �oad� s�stem HALT — — 1 μA 5V — — � μA VIL1 Inp�t Low Vo�tage for PA� PB� TCn� INT (except PA7) 5V — 0 — 1.5 V — — 0 — 0.�VDD V VIH1 Inp�t High Vo�tage for PA� PB� TCn� INT (except PA7) 5V — 3.5 — 5 V — — 0.8VDD — VDD V VIL� Inp�t Low Vo�tage (PA7) — — 0 — 0.4VDD V VIH� Inp�t High Vo�tage (PA7) — — 0.9VDD — VDD V IOL1 I/O Sink C�rrent (PA�PB) 3V VOL=0.1VDD 4 8 — mA 5V 10 �0 — mA IOH1 I/O So�rce C�rrent (PA�PB) 3V VOH=0.9VDD -� -4 — mA 5V -5 -10 — mA IOL� PA7 Sink C�rrent 5V VOL=0.1VDD � 3 — mA RPH P���-high Resistance (I/O) 3V — �0 �0 100 kΩ 5V — 10 30 50 kΩ Note: The standby current (ISTB1~ISTB2) are measured with all I/O pins in input mode and tied to VDD. |
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