ST2S08B datasheet(6/18 Pages) STMICROELECTRONICS

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Electrical characteristics

ST2S08B

6/18

Doc ID 18290 Rev 2

Electrical characteristics

VIN_SW = VIN_A = 5 V, VO1,2 =1.2 V, C1= 4.7 µF, C2 = C3 = 22 µF, L1 = L2 = 3.3 µH,

TJ = -30 to 125 °C, unless otherwise specified. Typical values refer to 25 °C.

Table 6.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

FB1,2

Feedback voltage

784

800

816

IFB1,2

VFB pin bias current

VFB = 1 V

600

Quiescent current

VINH > 1.2 V, VFB = 1 V

1.5

VINH = GND

µA

IO1,2

Output current

VIN = 3.0 to 5.5 V

(1),

TJ = - 30 to 85 °C

1.5

IMIN

Minimum output current

VINH

Inhibit threshold

3.0 V < VIN < 5 V

1.2

3.0 V < VIN < 5.5 V

1.3

Device OFF

0.4

IINH1,2

Inhibit pin current

µA

%VO1,2/

ΔVIN

Reference line regulation

3.0 V < VIN < 5.5 V

0.04

%VO/

VIN

ΔVO1,2

Reference load regulation

10 mA < IO < 1.5 A

PWM fS

PWM switching frequency

VFB = 0.7 V, TA = 25 °C

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

VFB = 0.7 V, TA = 25 °C

ISWL

Switching current limitation

(2)

ILKN

NMOS leakage current

VFB = 0.9 V, TA = 25 °C

0.1

µA

ILKP

PMOS leakage current

VFB = 0.9 V, TA = 25 °C

0.1

µA

RDSon-N

NMOS switch on resistance ISW = 250 mA

0.15

0.3

RDSon-P

PMOS switch on resistance ISW = 250 mA

0.2

0.4

Efficiency

IO = 20 mA to 100 mA

IO = 100 mA to 1.5 A

TSHDN

Thermal shutdown

150

°C

THYS

Thermal shutdown

hysteresis

°C

ISC - VIN

Short-circuit VIN range

(2)

Output short-circuit to ground

5.3

VO= 90 % of nominal value.

Guaranteed by design, but not tested in production.

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