TIP150 datasheet(1/3 Pages) COMSET

部件名	TIP150

功能描述	SILICON DARLINGTON POWER TRANSISTORS

PDF	3 Pages

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

标志

1 / 3 page

TIP150

15/10/2012

COMSET SEMICONDUCTORS

1/3

09/11/2012

SEMICONDUCTORS

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe.

High voltage, high forward and reverse energy designed for industrial and consumer

applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current

7

A

ICM

Collector Peak Current (1)

10

A

IB

Base Current

1.5

A

PT

Power Dissipation at Case

Temperature (2)

@ Tmb < 25°

80

Watts

Power Dissipation at free Air

Temperature (3)

2

tJ

Junction Temperature

-65 to +150

°C

ts

Storage Temperature range

-65 to +150

tL

Lead Temperature 3.2 mm from case for 10 seconde

260

1.

This value applies for tp <5ms, duty cycle <10%.

2.

Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

From Junction to Case Thermal Resistance

2.5

°C/W

RthJA

From Junction to Free-Air Thermal Resistance

62.5

类似零件编号 - TIP150

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP150	136Kb / 3P	POWER TRANSISTORS(7A,300-400V,80W)
Power Innovations Ltd	TIP150	188Kb / 7P	NPN SILICON POWER DARLINGTONS
Transys Electronics	TIP150	878Kb / 6P	NPN SILICON POWER DARLINGTONS
Savantic, Inc.	TIP150	112Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	TIP150	135Kb / 3P	Silicon NPN Power Transistors

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