TIP150 datasheet(2/3 Pages) COMSET

2 / 3 page

TIP150

15/10/2012

COMSET SEMICONDUCTORS

2/3

09/11/2012

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCBO

Collector-Base Breakdown

Voltage

IC= 1 mA, IE= 0

300

VCEO

Collector-Emitter Breakdown

Voltage (4)

IC= 10 mA, IB= 0

300

ICEO

Collector-Emitter Cutoff

Current

IB= 0, VCE = 300 V

250

µA

ICEOX(sus)

Collector-Emitter sustaining

Current

IE= 0, VCLAMP = VCEO

IEBO

Emitter Cutoff Current

VEB= 8 V, IC= 0

VCE(SAT)

Collector-Emitter saturation

Voltage (4-5)

IC= 1 A, IB= 10 mA

1.5

IC= 2 A, IB= 100 mA

1.5

IC= 5 A, IB= 250 mA

VBE(SAT)

Base-Emitter Saturation

Voltage (4-5)

IC= 2 A, IB= 100 mA

2.2

IC= 5 A, IB= 250 mA

2.3

hFE

Forward Current transfer ratio

(4-5)

VCE= 5.0 V, IC= 2.5 A

150

VCE= 5.0 V, IC= 5 A

VCE= 5.0 V, IC= 7 A

hfe

Small Signal Forward Current

transfer ratio

VCE= 5.0 V, IC= 0.5 A

f= 1 kHz

200

Diode forward Voltage

IF= 7 A

3.5

COB

Output Capacitance

IE= 0 ; VCB= 10 V

f= 1 MHz

150

SWITCHING TIMES.

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Delay Time

VCC= 250 V; IC= 5 A

IB1= -IB2= 250 mA

tp = 20 µs, duty cycle <2%.

0.03

µs

Rise time

0.18

Storage Time

3.5

Fall Time

1.6

These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2.0%

These parameters must be measured using voltage-sensing contacts, separate from the

current carrying contacts.

TIP150 数据表(PDF) 2 Page - Comset Semiconductor

TIP150 数据表(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2 3

数据表下载