UID4N60 datasheet(1/4 Pages) UNITPOWER

部件名	UID4N60

功能描述	N-Ch 600V Fast Switching MOSFETs

PDF	4 Pages

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制造商	UNITPOWER [Unitpower Technology Limited]

网页	http://www.unitpower.cn

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UI(D)4N60

N-Ch 600V Fast Switching MOSFETs

ID

600V

Ω

3.2A

The UI(D)4N60 is the highest performance trench

P-ch MOSFETs with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the synchronous buck converter

applications .

The UI(D)4N60 meet the RoHS and Green Product

requirement , 100% EAS guaranteed with full

function reliability approved.

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

TO-251/TO-252 Pin Configuration

Product Summery

BV

RD

DSS

S(ON)

2.25

Symbol

Parameter

TO-251/TO-252

Unites

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

–Continuous(T

C = 25℃)

–Continuous(T

C = 100℃)

3.2

A

1.9

A

IDM

Drain Current

–Pulsed

(Note1)

12.8

A

VGSS

Gate-Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy

(Note2)

63

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note3)

4.5

V/ns

PD

Power Dissipation (TC = 25℃)

-Derate above 25℃

57

W

0.45

W/℃

TJ1 TSTG

Operating and Storage Temperature Range

-55 to + 150

℃

TL

Maximum lead temperature for soldering purposes, 1/8

” from

case for 5 seconds

300

℃

Symbol

Parameter

Typ

Max

Units

Rθ JC

Thermal Resistance, Junction-to-Case

--

2.2

℃/W

Rθ JA

Thermal Resistance, Junction-to-Ambient

--

50

℃/W

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