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UID4N60 数据表(PDF) 2 Page - Unitpower Technology Limited

部件名 UID4N60
功能描述  N-Ch 600V Fast Switching MOSFETs
PDF  4 Pages
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制造商  UNITPOWER [Unitpower Technology Limited]
网页  http://www.unitpower.cn
标志 UNITPOWER - Unitpower Technology Limited

UID4N60 数据表(HTML) 2 Page - Unitpower Technology Limited

  UID4N60 Datasheet HTML 1Page - Unitpower Technology Limited UID4N60 Datasheet HTML 2Page - Unitpower Technology Limited UID4N60 Datasheet HTML 3Page - Unitpower Technology Limited UID4N60 Datasheet HTML 4Page - Unitpower Technology Limited  
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Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch 600V Fast Switching MOSFETs
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250μA
600
--
--
V
ΔBV
DSS/
ΔT
J
Breakdown
Voltage
Temperature
Coefficient
ID = 250μ A, Referenced to 25℃
--
0.6
--
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
(TC = 25℃)
--
--
10
μA
VDS = 480 V, VGS = 0 V
(TC = 125℃)
--
--
100
μA
IGSSF
Gate-Body
Leakage
Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body
Leakage
Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2.5
3.5
4.5
V
RDS(on)
Static Drain-Source
On-resistance
VGS = 10 V, ID = 1.6A
--
2.25
2.81
Ω
gFS
Forward Transconductance
VDS = 10 V, ID = 1.6 A
(Note 4)
--
2.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHZ
--
500
650
pF
Coss
Output Capacitance
--
53.2
69
pF
Crss
Reverse Transfer Capacitance
--
7.0
9.1
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 3.2A,
RG = 25 Ω
(Note 4, 5)
--
11
27
ns
tr
Turn-On Rise Time
--
20
48
ns
td(off)
Turn-Off Delay Time
--
30
72
ns
tf
Turn-Off Fall Time
--
19
46
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 3.2A,
VGS = 10 V
(Note 4, 5)
--
14.5
20
nC
Qgs
Gate-Source Charge
--
3.4
--
nC
Qgd
Gate-Drain Charge
--
7.0
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12.8
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 3.2A
--
1.13
1.4
V
trr
Reverse Recovery Time
VGS= 0 V,IS = 3.2A,
dIF/dt = 100 A/μ s
(Note 4)
--
561
--
ns
Qrr
Reverse Recovery Charge
--
0.8
--
μ C
Notes:
1. Repetitive Rating:Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 3.4A, VDD = 50V, RG =25Ω, Starting TJ = 25℃
3. ISD ≤ 3.2A, di/dt ≤ 200A/μS, VDD ≤ BVDSS, Starting TJ = 25℃
4. Pulse Test:Pulse width
≤ 300μS, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UI(D)4N60



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