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UID4N60 数据表(PDF) 2 Page - Unitpower Technology Limited |
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UID4N60 数据表(HTML) 2 Page - Unitpower Technology Limited |
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2 / 4 page ![]() 2 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) N-Ch 600V Fast Switching MOSFETs Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250μA 600 -- -- V ΔBV DSS/ ΔT J Breakdown Voltage Temperature Coefficient ID = 250μ A, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V (TC = 25℃) -- -- 10 μA VDS = 480 V, VGS = 0 V (TC = 125℃) -- -- 100 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.5 3.5 4.5 V RDS(on) Static Drain-Source On-resistance VGS = 10 V, ID = 1.6A -- 2.25 2.81 Ω gFS Forward Transconductance VDS = 10 V, ID = 1.6 A (Note 4) -- 2.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHZ -- 500 650 pF Coss Output Capacitance -- 53.2 69 pF Crss Reverse Transfer Capacitance -- 7.0 9.1 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 3.2A, RG = 25 Ω (Note 4, 5) -- 11 27 ns tr Turn-On Rise Time -- 20 48 ns td(off) Turn-Off Delay Time -- 30 72 ns tf Turn-Off Fall Time -- 19 46 ns Qg Total Gate Charge VDS = 480 V, ID = 3.2A, VGS = 10 V (Note 4, 5) -- 14.5 20 nC Qgs Gate-Source Charge -- 3.4 -- nC Qgd Gate-Drain Charge -- 7.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2A -- 1.13 1.4 V trr Reverse Recovery Time VGS= 0 V,IS = 3.2A, dIF/dt = 100 A/μ s (Note 4) -- 561 -- ns Qrr Reverse Recovery Charge -- 0.8 -- μ C Notes: 1. Repetitive Rating:Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 3.4A, VDD = 50V, RG =25Ω, Starting TJ = 25℃ 3. ISD ≤ 3.2A, di/dt ≤ 200A/μS, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test:Pulse width ≤ 300μS, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UI(D)4N60 |
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