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L6480 数据表(PDF) 14 Page - STMicroelectronics |
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L6480 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 73 page ![]() Electrical characteristics L6480 14/73 Doc ID 023278 Rev 3 trCK tfCK SPI clock rise and fall time(4) 1µs thCK tlCK SPI clock high and low time(4) 90 ns tsetCS Chip select setup time(4) 30 ns tholCS Chip select hold time (4) 30 ns tdisCS Deselect time(4) 625 ns tsetSDI Data input setup time(4) 20 ns tholSDI Data input hold time(4) 30 ns tenSDO Data output enable time(4) 95 ns tdisSDO Data output disable time (4) 95 ns tvSDO Data output valid time (4) 35 ns tholSDO Data output hold time(4) 0ns PWM modulators fPWM Programmable PWM frequency(2) fosc = 32 MHz F_PWM_INT=’11X’ F_PWM_DEC=’000’ 5.6 kHz fosc = 32 MHz F_PWM_INT=’000’ F_PWM_DEC=’111’ 125 NPWM PWM resolution 8 bit Overcurrent protection VOCD Programmable overcurrent detection voltage VDS threshold OCD_TH = ‘11111’ 800 1000 1100 mV OCD_TH = ‘00000’ 27 31 35 mV OCD_TH = ‘01001’ 270 312.5 344 mV OCD_TH = ‘10011’ 500 625 688 mV tOCD,Comp OCD comparator delay 100 200 ns tOCD,Flag OCD to flag signal delay time 230 530 ns tOCD,SD OCD to shutdown delay time OCD_TH = '11111' OCD event to 90% of gate voltage 400 630 ns Stall detection VSTALL Programmable stall detection VDS voltage threshold STALL_TH = '11111' 1000 mV STALL_TH = '00000' 31 Standby Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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