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DA6180C.000

26 November, 2010

MAS6180 PAD LAYOUT

VDD

QOP

QOM

QI

AGC

OUT

DEC

AON

PDN

RFIP

RFIM

VSS

1160 µ

µ

µ

µ

m

VSS pad

bonded first!

MAS6180Cx

DIE size = 1160 µm x 1320 µm; PAD size = 80 µm x 80 µm

Note: Because the substrate of the die is internally connected to VSS, the die has to be connected to VSS or left

floating. Please make sure that VSS is the first pad to be bonded. Pick-and-place and all component assembly

are recommended to be performed in ESD protected area.

Note: Coordinates are pad center points where origin has been located in bottom-left corner of the silicon die.

Pad Identification

Name

X-coordinate

Y-coordinate

Note

Power Supply Voltage

VDD

126 µm

1122 µm

Positive Quartz Filter Output

QOP

126 µm

955 µm

Negative Quartz Filter Output

QOM

126 µm

787 µm

1

Quartz Filter Input for Crystal

QI

126 µm

604 µm

AGC Capacitor

AGC

126 µm

435 µm

Receiver Output

OUT

126 µm

258 µm

2

Demodulator Capacitor

DEC

1034 µm

261 µm

AGC On Control

AON

1034 µm

445 µm

3

Power Down

PDN

1034 µm

613 µm

4

Positive Receiver Input

RFIP

1034 µm

802 µm

5

Negative Receiver Input

RFIM

1034 µm

980 µm

5

Power Supply Ground

VSS

1034 µm

1111 µm

Notes:

1) QOM bonding pad is electrically unconnected in MAS6180C1 version

2) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced (modulated)

-

-

at power down the output is pulled to VSS (pull down switch)

3) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)

-

Internal pull-up with current < 1 µA which is switched off at power down

4) PDN = VSS means receiver on; PDN = VDD means receiver off

Fast start-up is triggered when the receiver is after power down (PDN=VDD) controlled to power up

(PDN=VSS) i.e. at the falling edge of PDN signal.

5) Receiver inputs RFIP and RFIM have both 1.4 MΩ biasing resistors towards VDD