RO4350B datasheet(3/15 Pages) FREESCALE

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AFT21S230SR3 AFT21S232SR3

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1500 mA, f = 2140 MHz

VSWR 10:1 at 32 Vdc, 269 W CW Output Power

(3 dB Input Overdrive from 182 W CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, 2110--2170 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

182 (1)

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 2110--2170 MHz bandwidth)



—

--19.3

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

AFT21S230S

AFT21S232S

VBWres

—

MHz

Gain Flatness in 60 MHz Bandwidth @ Pout =50 W Avg.

—

0.5

—

Gain Variation over Temperature

(--30Cto+85C)

G

—

0.016

—

dB/C

Output Power Variation over Temperature

(--30Cto+85C) (1)

P1dB

—

0.007

—

dB/C

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

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