RO4350B datasheet(2/15 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor, Inc.

AFT21S230SR3 AFT21S232SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

C

Case Operating Temperature Range

--40 to +150

C

Operating Junction Temperature Range (1,2)

--40 to +225

C

CW Operation @ TC =25C

Derate above 25C

163

0.79

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1500 mA, 2110 MHz

Case Temperature 86C, 140 W CW(4),28Vdc,IDQ = 1500 mA, 2110 MHz

RJC

0.43

0.38

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 291 Adc)

VGS(th)

1.5

2.0

2.5

Vdc

Gate Quiescent Voltage

(VDD =28 Vdc, ID = 1500 mAdc, Measured in Functional Test)

VGS(Q)

2.2

2.7

3.2

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =3.7 Adc)

VDS(on)

0.1

0.2

0.3

Vdc

Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., f = 2110 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

16.0

16.7

19.0

Drain Efficiency

D

29.0

30.5

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

6.7

7.2

—

Adjacent Channel Power Ratio

ACPR

—

--35.7

--34.0

dBc

Input Return Loss

IRL

—

--19

--10

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

5. Part internally matched both on input and output.

(continued)

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